How to classify semiconductors?

Semiconductors can be divided into first, second, and third generation semiconductors based on different substrate materials. The first generation semiconductors use silicon (Si) and germanium (Ge) as substrate materials and are most widely used. The second generation semiconductors use gallium arsenide (GaAs) as substrate materials, while the third generation semiconductors use gallium nitride (GaN) and silicon carbide (SiC) as substrate materials. According to specifications, semiconductors can be divided into military grade, automotive grade, industrial grade, and civilian grade, which have different temperature adaptability and anti-interference capabilities. In addition, the World Organization for Semiconductor Trade Statistics (WSTS) categorizes all semiconductors into four major categories based on their structure and function: integrated circuits, discrete devices, optoelectronic devices, and sensors.

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First generation semiconductor

The first generation of semiconductors mainly referred to Si and Ge. In the 1850s, Ge dominated the semiconductor market, mainly used in low-frequency, low voltage, medium power transistors and photodetectors. However, Ge semiconductor devices were not resistant to irradiation and high temperatures, and were gradually replaced by Si devices in the 1860s. Nowadays, Si accounts for over 95% of the semiconductor device market, and almost 100% of integrated circuits use Si materials. Given the maturity of the Si industry and the high reliability of Si based devices, Si will continue to maintain its leadership and core position in the semiconductor industry in the 21st century. However, Si materials also have limitations in their physical properties, such as limited applications in optoelectronics and high-frequency high-power devices

Second generation semiconductor

There are many second generation semiconductors, mainly including binary and Ternary compound semiconductors composed of III-V family, such as GaAs, lnSb, GaAsAl, etc; Solid solution semiconductors, such as Ge Si; Amorphous semiconductors, such as amorphous Si, amorphous oxides (such as IGZO), etc; Organic semiconductors, such as copper phthalocyanine. The second generation of semiconductors is mainly used for producing high-speed, high-frequency, high-power, and light-emitting electronic devices, and has a complementary relationship with the first generation of semiconductors. In addition, the second generation semiconductor is also an excellent material for making high-performance microwave, millimeter wave and light-emitting devices. With the rise of information technology, it is widely used in optical communication, mobile communication, and satellite communication. However, second-generation semiconductors also have prominent drawbacks: GaAs and InP are scarce materials, very expensive, and toxic, polluting the environment.

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Third generation semiconductor

The third generation of semiconductors generally refers to wide bandgap semiconductors, with the main representative materials being SiC, GaN, AlN, and ZnO. The bandgap width of these materials is very large, generally greater than 2.3 eV, such as SiC 3.2 eV and GaN 3.4 eV. The wide bandgap gives third-generation semiconductors a significant breakdown electric field. In addition, third-generation semiconductors also have the characteristics of high thermal conductivity, high electron saturation rate, greater radiation resistance than Si, and can be applied to high-power devices. Therefore, third-generation semiconductors are mainly used in semiconductor lighting, lasers, detectors, and high-power and radiation resistant electronic devices. With the rise of 5G communication, third-generation semiconductors have also made a difference in the field of 5G communication. The most popular GaN fast charging device currently sold is the third-generation semiconductor GaN.

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